June 2010

VLSI

Bipolar IC Manufacturing Process

In this post, we shall discuss, the fabrication of a standard, junction- isolated bipolar IC.  Of course, many devices can be formed at a time over the surface of the water if appropriate patterns are provided. We shall show only one device, that is, a bipolar transistor as an example. The major steps in the […]

Lighting Circuits

Mains Operated LED Circuit

This is a modified version of the circuit Super bright LED Night Light published here. This circuit is submitted by Mr. Seetharaman and its full credit goes to him. This is the circuit of a well tried and reliable 230 Volt AC mains operated 24 LEDs (super bright 50mA LEDs). While practically compare the brightness

VLSI

MESFET

The figure below shows a diagram of gallium arsenide (GaAs) MESFET (metal-semiconductor field-effect transistor). MESFET is nothing but a JFET fabricated in GaAs which employs a metal-semiconductor gate region (a Schottky diode). The device operates in essentially the same way as does a junction-gate FET, except that instead of a gate-channel on junction there is

VLSI

Epitaxial Devices – Characteristics

Junction Characteristics Before describing the fabrication sequences for ICs, it will be useful to provide insight into the use of epitaxial structures for devices. A reverse-biased p-n junction can be considered to be a parallel-plate capacitor with the depletion region being the insulator or dielectric as shown in the figure below. The depletion or space-charge

VLSI

Metallization Process

To know about the different IC fabrication techniques, click on the link below. TAKE A LOOK : IC FABRICATION TECHNIQUES Metallization is the final step in the wafer processing sequence. Metallization is the process by which the components of IC’s are interconnected by aluminium conductor. This process produces a thin-film metal layer that will serve

VLSI

Ion Implantation

To know about the different IC fabrication techniques, click on the link below. TAKE A LOOK : IC FABRICATION TECHNIQUES ION IMPLANTATION Ion Implantation is an alternative to a deposition diffusion and is used to produce a shallow surface region of dopant atoms deposited into a silicon wafer. This technology has made significant roads into

VLSI

Diffusion of Impurities for IC Fabrication

To know about the different IC fabrication techniques, click on the link below. TAKE A LOOK : IC FABRICATION TECHNIQUES Diffusion of Dopant Impurities The process of junction formation, that is transition from p to n type or vice versa, is typically accomplished by the process of diffusing the appropriate dopant impurities in a high

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