Double-Diffused MOS (DMOS) In this article, the Double-Diffused MOS (DMOS) structure is explained with a diagram. The working of Vertical DMOS Transistor is also explained in detail with its structural analysis and diagram. To know the basics of DMOS take a look at the following posts. TAKE A LOOK : SHORT CHANNEL MOS STRUCTURES The […]
Short Channel MOS Structures This article discusses the different factors that limit the speed of a MOSFET. The common methods to reduce the parasitics like Scaled MOS (SMOS) and High-performance MOS (HMOS) is explained in detail with their structure and diagram. There are many factors that limit the speed of a MOSFET. Because of the
NMOS Fabrication Process In this article the various steps needed for NMOS Fabrication are explained in detail along with diagrams. To know the basic IC Fabrication Techniques, click on the link below. TAKE A LOOK : IC FABRICATION TECHNIQUES There are a large number and variety of basic fabrication steps used in the production of
Description. Here is the circuit diagram of a 30V/3A adjustable regulator using the LM723 IC from the National Semiconductors. LM723 is an integrated series regulator whose output voltage can be adjusted between 2V and 37V. The IC by itself can deliver an output current of 150mA and the maximum input voltage to the IC is
PMOS vs NMOS The advantages of n-channel MOSFET’s over p-channel MOSFET’s and vice versa have been explained in detail. Even the problems that NMOS faces in device processing and oxidation have also been explained. n-channel MOSFETs have some inherent performance advantages over p-channel MOSFET’s. The mobility of electrons, which are carriers in the case of
Description. The circuit shown here is of a TV antenna booster based on the transistor BF180. The circuit operates in the UHF band and has a gain of 15dB. Capacitors C2,C3 C4 ,C5 and inductors L3, L4 forms a UHF band pass filter. The input signal is fed to the emitter of Q1 through this
MOSFET Technology and Various MOS Process This article focuses on basics of MOSFET Technology,basics of various MOS process like p-channel MOS (PMOS), n-channel MOS (NMOS), Complimentary MOS (CMOS) – its manufacturing, cross section, and other advantages of one over other. Most of the LSI/VLSI digital memory and microprocessor circuits is based on the MOS Technology.
Dielectric Isolation in Integrated Circuits This article focuses on Dielectric isolation in various Integrated Circuits; especially in the VLSI sector, discusses various methods used for dielectric isolation like V-groove isolation, Silicon on Insulator technology and Epitaxial layer overgrowth. Dielectric isolation, as you all know, is the process of electrically isolating various components in the IC
The figure below shows some IC JFET structures. The n-channel JFET structure of first figure [a] is compatible with the n-p-n transistor fabrication sequence. Another view of this n-channel JFET is shown in second figure [a], where we note that the top p+ gate region extends beyond the n-type epitaxial layer region to make contact
Monolithic Planar Diode Configurations We have seen that in the fabrication of an IC the geometry and the doping of the various layers must be chosen to optimize uncharacteristic of the transistor which is the most important device. It is not economically feasible to provide extra processing steps to fabricate diodes. Therefore diodes are generally
Description. The circuit diagram of a blinking LED that can be operated from the mains supply is shown here. The working of this circuit is as follows. When mains power is switched ON the capacitor C2 charges through resistor R1 and diode D1. When the voltage across the capacitor becomes greater than 32V ( break
Once all components are fabricated on a single crystal wafer, they must be electrically isolated from each other. The problem is not encountered indiscrete circuits, because physically all components are isolated. There are two methods of isolation in Integrated circuits. They are P-NÂ junction isolation and Dielectric isolation In this post we shall discuss p-n
Description. The circuit diagram shown here is of a 2 x 60 Watt stereo amplifier based on the LM4780 from National Semiconductors. LM4780 is a superb audio amplifier IC capable of delivering 60W Rms power output / channel into 8 ohm speakers. The LM4780 has very low total harmonic distortion (less than 0.5% at full
