Gallium Arsenide (GaAs) Fabrication Techniques: This article is used to describe the basic fabrication methods of Gallium Arsenide (GaAs), mainly using LEC Growth process. Various methods are used for the fabrication of Gallium Arsenide (GaAs). Out of all the methods, the main growth technique that is used is the liquid-encapsulated Czochralski (LEC) growth of GaAs […]
Metal Semi-conductor FET (MESFET) This article briefly describes the structure of MESFET , its comparison with MOSFET, D-MESFET and E-MESFET, circuit symbols, and also the characteristics of Schottky Barriers. A post on MESFET has already been discussed. TAKE A LOOK : MESFET This post also gives a brief description of MESFET and the main classification
Gallium Arsenide (GaAs) Devices In this article, the first and second generation types of Gallium Arsenide (GaAs) devices are explained. During the last few years a number of different devices have been developed. MESFET was regarded as one of the earliest type of GaAs devices. The so-called ‘first generation’ of GaAs devices includes: Depletion-mode metal
Description. The circuit diagram shown here is of a 10V switching regulator based on the LM5007 from National Semiconductors. The LM5007 is an integrated step down switching regulator which has all necessary systems required for making a cost effective and reliable switching regulator circuit. The IC is available in MSOP-8, LLp-8 packages and has a
Gallium Arsenide (GaAs) – Electron Velocity-Field Behaviour In this post, the graph between the electron field and the electron velocity is explained. The reason for the decrease in the drift velocity of the electrons have also been explained in detail. The charge carriers in the GaAs material that is the electrons will obtain energy as
