Gallium Arsenide (GaAs) Fabrication

Arun February 3, 2011 7 Comments
Gallium Arsenide (GaAs) Fabrication Techniques: This article is used to describe the basic fabrication methods of Gallium Arsenide (GaAs), mainly using LEC Growth process. Various methods are used for the fabrication of Gallium Arsenide (GaAs). Out of all the methods, the main growth technique that is used is the liquid-encapsulated Czochralski (LEC) growth of  GaAs  crystals from high purified pyrolytic  boron nitride (PBN) in high pressure. The GaAs crystals can be easily achieved from the above method as  the...
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Metal Semi-conductor FET (MESFET)

Arun March 21, 2011 4 Comments
Metal Semi-conductor FET (MESFET) This article briefly describes the structure of MESFET , its comparison with MOSFET, D-MESFET and E-MESFET, circuit symbols, and also the characteristics of Schottky Barriers. A post on MESFET has already been discussed. TAKE A LOOK : MESFET This post also gives a brief description of MESFET and the main classification of MESFET. The gallium arsenide (GaAs) field-effect transistor (FET) is a bulk current-conduction majority-carrier device. This device is , is fabricated from bulk gallium...
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Gallium Arsenide (GaAs) Devices

Arun February 9, 2011 No Comments
Gallium Arsenide (GaAs) Devices In this article, the first and second generation types of Gallium Arsenide (GaAs) devices are explained. During the last few years a number of different devices have been developed. MESFET was regarded as one of the earliest type of GaAs devices. The so-called ‘first generation’ of GaAs devices includes: Depletion-mode metal semiconductor field-effect transistor Enhancement-mode metal-semiconductor field-effect transistor Enhancement-mode junction field-effect transistor and Complementary enhancement-mode junction field-effect transistor To know more...
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Electron Velocity-Field Behaviour of Gallium Arsenide (GaAs)

Arun March 21, 2011 No Comments
Gallium Arsenide (GaAs) – Electron Velocity-Field Behaviour In this post, the graph between the electron field and the electron velocity is explained. The reason for the decrease in the drift velocity of the electrons have also been explained in detail. The charge carriers in the GaAs material that is the electrons will obtain energy as soon as an electric field is applied. When the energy is obtained from the field, the electrons will also lose certain amount of...
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Energy Band Structure of Gallium Arsenide (GaAs)

john February 7, 2011 No Comments
Gallium Arsenide (GaAs) – Energy Band Structure In this article, the energy band structure of GaAs is explained with a diagram and also with respect to its comparison with Silicon. The cause of the curves in the valence band and conduction band of GaAs is thoroughly explained. Electron Mobility, a characteristic of GaAs, and its depending characteristics are also explained in detail. The light emitting diode characteristics of GaAs is also compared with Silicon. Before going into details, it...
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Channeling Effect of Gallium Arsenide (GaAs)

john February 7, 2011 1 Comment
Gallium Arsenide (GaAs) – Channeling Effect This article explains the channeling effect of Gallium Arsenide (GaAs), and its orientation dependency. The concept of axial channeling is also explained. Before going into details, it is better to know the basics on GaAs in VLSI technology. Click on the link below. TAKE A LOOK : ULTRA-FAST SYSTEMS AND GaAs VLSI TECHNOLOGY The whole concept of crystal orientation becomes important when three main steps are done. The etching of the crystal Ion-implantation...
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Gallium Arsenide (GaAs) Doping Process

john March 21, 2011 3 Comments
Gallium Arsenide (GaAs) Doping This article briefly explains the compound semiconductor Gallium Arsenide (GaAs) with a figure showing the arrangement of atoms. The Gallium Arsenide (GaAs) doping process, with respect to the p-type and n-type material is also explained with diagrams. Before going into details, it is better to know the basics on GaAs in VLSI technology. Click on the link below. TAKE A LOOK : ULTRA-FAST SYSTEMS AND GaAs VLSI TECHNOLOGY TAKE A LOOK : GALLIUM ARSENIDE (GaAs)...
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Gallium Arsenide (GaAs) Crystal Structure

john February 8, 2011 1 Comment
In this post, the origin of Gallium and Arsenic, as well as the structure and properties of the Gallium Arsenide (GaAs) crystal is explained in detail. The atomic structure of Gallium and Arsenic are explained with diagrams and also compared with Silicon. The valence configuration of Ga, As and Si is also shown. Before going into details, it is better to know the basics on GaAs in VLSI technology. Click on the link below. TAKE A LOOK : ULTRA-FAST...
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Ultra-fast Systems and GaAs VLSI Technology

john February 8, 2011 1 Comment
Ultra-fast Systems and GaAs VLSI Technology In this post, we will briefly review some of the limitations of silicon devices and then look at the emerging alternative for ultra-fast systems — gallium arsenide. Submicron CMOS technology Speed and smaller device dimensions are closely interrelated and we have already touched on the fact that the foreseeable limits on channel length for MOS transistors is in the region of 0.14 micro meters, after which further scaling down results in unworkable transistor...
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V-Groove MOS (VMOS)

john February 9, 2011 No Comments
V-Groove MOS (VMOS) This article explains in detail about the structure of VMOS with diagram, its characteristics, anisotropic etching and also the applications of VMOS. To know the basics, click on the links given below. TAKE A LOOK : SHORT CHANNEL MOS STRUCTURES VMOS Structure The structure of VMOS is similar to short-channel power FET that is constructed as a vertical structure.  The operation is same as that of a Double-Diffused MOS (DMOS) device. Take a look at the...
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