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	<title>Electronic Circuits-Circuit Diagram-Electronics Projects-Design</title>
	<link>http://www.circuitstoday.com</link>
	<description>Free Electronic Circuits &#38; Electronic Designs</description>
	<lastBuildDate>Wed, 08 Sep 2010 06:43:41 +0000</lastBuildDate>
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		<title>Gallium Arsenide (GaAs) Devices</title>
		<description><![CDATA[During the last few years a number of different devices have been developed. MESFET was regarded as one of the earliest type of GaAs devices. The so-called &#8216;first generation&#8217; of GaAs devices includes: Depletion-mode metal semiconductor field-effect transistor, D-MESFET Enhancement-mode metal-semiconductor field-effect transistor, E-MESFET Enhancement-mode junction field-effect transistor, E-JFET and Complementary enhancement-mode junction field-effect transistor, [...]]]></description>
		<link>http://www.circuitstoday.com/gallium-arsenide-gaas-devices</link>
			</item>
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		<title>10V switching regulator using LM5007</title>
		<description><![CDATA[Description. The circuit diagram shown here is of a 10V switching regulator based on the LM5007 from National Semiconductors. The LM5007 is an integrated step down switching regulator which has all necessary systems required for making a cost effective and reliable switching regulator circuit. The IC is available in MSOP-8, LLp-8 packages and has a [...]]]></description>
		<link>http://www.circuitstoday.com/10v-switching-regulator-using-lm5007</link>
			</item>
	<item>
		<title>Electron Velocity-Field Behaviour of Gallium Arsenide (GaAs)</title>
		<description><![CDATA[As the applied electric field, E, across the GaAs material is increased, the charge carriers, that is electrons in this case, gain energy from the applied field. At the same time, through collisions (that is, optical phonon scattering), with the lattice, the electrons also lose a small portion of this energy. So long as the [...]]]></description>
		<link>http://www.circuitstoday.com/electron-velocity-field-behaviour-of-gallium-arsenide-gaas</link>
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	<item>
		<title>Energy Band Structure of Gallium Arsenide (GaAs)</title>
		<description><![CDATA[Before going into details, it is better to know the basics on GaAs in VLSI technology. Click on the link below. TAKE A LOOK : ULTRA-FAST SYSTEMS AND GaAs VLSI TECHNOLOGY One of the important characteristics that is attributed to GaAs is its superior electron mobility brought about as the result of its energy band [...]]]></description>
		<link>http://www.circuitstoday.com/energy-band-structure-of-gallium-arsenide-gaas</link>
			</item>
	<item>
		<title>Channeling Effect of Gallium Arsenide (GaAs)</title>
		<description><![CDATA[Before going into details, it is better to know the basics on GaAs in VLSI technology. Click on the link below. TAKE A LOOK : ULTRA-FAST SYSTEMS AND GaAs VLSI TECHNOLOGY The whole concept of crystal orientation becomes important during The etching of the crystal Ion-implantation Passivation This introduces an orientation dependency that influences the [...]]]></description>
		<link>http://www.circuitstoday.com/channeling-effect-of-gallium-arsenide-gaas</link>
			</item>
	<item>
		<title>20W audio amplifier using LM1875</title>
		<description><![CDATA[Description. This is just another 20W audio amplifier circuit , but this time based on the LM1875 audio amplifier IC from National Semiconductors. With a 25V dual power supply LM1875 can deliver 20W of audio power into a 4 ohm speaker. The LM1875 requires very less external components and has very low distortion. The IC [...]]]></description>
		<link>http://www.circuitstoday.com/20w-audio-amplifier-using-lm1875</link>
			</item>
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		<title>Gallium Arsenide (GaAs) Doping Process</title>
		<description><![CDATA[Before going into details, it is better to know the basics on GaAs in VLSI technology. Click on the link below. TAKE A LOOK : ULTRA-FAST SYSTEMS AND GaAs VLSI TECHNOLOGY TAKE A LOOK : GALLIUM ARSENIDE (GaAs) CRYSTAL STRUCTURE GaAs &#8211; A Compound Semiconductor Gallium arsenide is a compound semiconductor which may be defined [...]]]></description>
		<link>http://www.circuitstoday.com/gallium-arsenide-gaas-doping-process</link>
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	<item>
		<title>20W audio amplifier using TDA7240</title>
		<description><![CDATA[Description The audio amplifier shown here is based on the TDA7240 IC from ST Microelectronics. The TDA 7240 is an integrated audio amplifier IC that can deliver 20 watts of audio output power into a 4ohm load. The IC has minimum external parts count and is available in the 7 pin compact Heptawatt package. The [...]]]></description>
		<link>http://www.circuitstoday.com/20w-audio-amplifier-using-tda7240</link>
			</item>
	<item>
		<title>Gallium Arsenide (GaAs) Crystal Structure</title>
		<description><![CDATA[Before going into details, it is better to know the basics on GaAs in VLSI technology. Click on the link below. TAKE A LOOK : ULTRA-FAST SYSTEMS AND GaAs VLSI TECHNOLOGY Gallium (Ga), a toxic material, is produced as a by-product in both the zinc and aluminium production processes. Similarly, arsenic (As), which is also [...]]]></description>
		<link>http://www.circuitstoday.com/gallium-arsenide-gaas-crystal-structure</link>
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		<title>Ultra-fast Systems and GaAs VLSI Technology</title>
		<description><![CDATA[In this post, we will briefly review some of the limitations of silicon devices and then look at the emerging alternative for ultra-fast systems — gallium arsenide. Submicron CMOS technology Speed and smaller device dimensions are closely interrelated and we have already touched on the fact that the foreseeable limits on channel length for MOS [...]]]></description>
		<link>http://www.circuitstoday.com/ultra-fast-systems-and-gaas-vlsi-technology</link>
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