V-FET or Power Mosfets

jojo September 7, 2009 3 Comments
Power MOSFETs are usually constructed in V-configuration, as shown in figure. That is why, the device is sometimes called the V-MOSFET or V-FET. V-shaped cut penetrates from the device surface almost to the N+ substrate through N+, P and...
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Dual Gate Mosfets

jojo September 7, 2009 No Comments
Cross-view of a dual-gate N-channel depletion type MOSFET is shown in figure. It acts as if two FETs are connected in series, as is obvious from figure. The middle block acts as drain for unit no 1 and source...
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EMOSFET-Enhancement MOSFET

jojo August 31, 2009 3 Comments
Although DE-MOSFET is useful in special applications, it does not enjoy widespread use. However, it played an important role in history because it was part of the evolution towards the E-mode MOSFET, a device that has revolutionized the electronic...
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DEMOSFET Amplifiers

jojo April 23, 2012 No Comments
DE-MOSFET can be operated either with positive or negative gate, so its operating or quiescent point can be set at VGS = 0, as illustrated in figure. In figure the gate G is at ground potential for dc since...
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DEMOSFET-Depletion Enhancement MOSFET

jojo April 23, 2012 9 Comments
We know that when the gate is biased negative with respect to the source in an N-channel JFET, the depletion region widths are increased. Theincrease in the depletion regions reduces the channel thickness, which increases its resistance. The net...
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MOSFET-Metal Oxide Semiconductor Transistor

jojo April 23, 2012 2 Comments
Introduction to MOSFET-Metal Oxide Semiconductor Field Effect Transistor, Metal-oxide-semiconductor field-effect transistor (MOSFET) is an important semiconductor device and is widely employed in many circuit applications. Since it is constructed with the gate terminal insulated from the channel, it is...
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FET applications

jojo July 25, 2018 8 Comments
What is FET (Field Effect Transistor) FET, also called unipolar transistor is a transistor used to control the electrical behaviour of a device. FET has a very high input impedance (100 Mega ohm in case of JFETs and 104...
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FET biasing

jojo August 31, 2009 1 Comment
Unlike BJTs, thermal runaway does not occur with FETs, as already discussed in our blog. However, the wide differences in maximum and minimum transfer characteristics make ID levels unpredictable with simple fixed-gate bias voltage. To obtain reasonable limits on...
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Simple FET Amplifier

john August 28, 2009 2 Comments
From the circuit named “looking into the drain” of the FET it is seen (for small signal operation) an equivalent circuit consisting of two generators in series, one of – u times the gate signal voltage Vin and the...
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